Fabrication of site-controlled InGaN quantum dots using reactive-ion etching
نویسندگان
چکیده
منابع مشابه
Fabrication of site-controlled InGaN quantum dots using reactive-ion etching
We adopted the simple top-down etching to fabricate siteand dimension-controlled InGaN quantum dots. Each quantum dot is disk shaped and embedded in a nanoscale pillar. Arrays of nanopillars with varying densities and nanopillar diameters were fabricated from an InGaN/GaN single quantum well using inductivelycoupled plasma reactive-ion etching. Micro-photoluminescence (μ-PL) was used to charact...
متن کاملReactive ion etching of GaN using WI3
Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...
متن کاملReactive ion etching
The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...
متن کاملFabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing
A planar quantum magnetic disk ~QMD! with a magnetic storage density of 65 Gbit/in., over two orders of magnitude greater than the state-of-the-art magnetic storage density, has been fabricated. The planar QMD structure consists of single-domain nickel ~magnetic! nanopillars uniformly embedded in a SiO2 ~nonmagnetic! disk. Electron beam lithography was used to define the QMD bit’s size and loca...
متن کاملFabrication of GaN-based Photonic Crystal Structures by Reactive Ion Etching 87 Fabrication of GaN-based Photonic Crystal Structures by Reactive Ion Etching
The fabrication of the 2D GaN-based photonic crystal structure at optical scales, a subμm scale in our case is very challenging. In our work, a double-etching method proved to be feasible to achieve the periodic GaN/air variation. The pattern was defined in a PMMA resist by electron-beam lithography and transferred to SiO2 by reactive ion etching (RIE) in a CF4 plasma and further into GaN by RI...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: physica status solidi (c)
سال: 2011
ISSN: 1862-6351
DOI: 10.1002/pssc.201100428